THEORY OF A TUNNEL DIODE OSCILLATOR IN A MICROWAVE STRUCTURE

被引：20

作者：

YAMASHITA, E

BAIRD, JR

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 04期

关键词：

D O I：

10.1109/PROC.1966.4780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：606 / +

页数：1

共 11 条

[1] GALLIUM ARSENIDE ESAKI DIODES FOR HIGH-FREQUENCY APPLICATIONS [J].

BURRUS, CA .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1031-&

[2]

Collin R. E., 1990, FIELD THEORY GUIDED, V5

[3] NEW MICROWAVE MEASUREMENT TECHNIQUE TO CHARACTR AT ZERO VOLTS BIAS [J].

DELOACH, BC .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1964, MT12 (01) :15-&

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[5] CONDITIONS OF OSCILLATION FOR WAVEGUIDE MOUNTED TUNNEL DIODES [J].

HOFFINS, CC ;

ISHII, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1964, MT12 (02) :176-&

[6] MULTIFREQUENCY MICROWAVE GENERATION USING LARGE CAPACITANCE TUNNEL DIODE [J].

JASKOLSKI, SV ;

ISHII, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1964, MT12 (03) :361-&

[7]

LEWIN L, 1951, ADVANCES THEORY WAVE

[8]

OGUEY HJ, 1963, IEEE T MICROW THEORY, VMT11, P412

[9] TUNNEL-DIODE MICROWAVE OSCILLATORS [J].

STERZER, F ;

NELSON, DE .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (04) :744-&

[10]

TRAMBARULO R, 1961 INT SOL CIRC C

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