CRYSTALLOGRAPHIC CONTRAST DUE TO PRIMARY ION CHANNELING IN THE SCANNING ION-MICROSCOPE

被引：15

作者：

LAMARCHE, PH ^{[1
]}

LEVISETTI, R ^{[1
]}

LAM, K ^{[1
]}

机构：

[1] UNIV CHICAGO,ENRICO FERMI INST,CHICAGO,IL 60637

来源：

关键词：

D O I：

10.1109/TNS.1983.4332498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1240 / 1242

页数：3

共 18 条

[1] BRUSILOVSKI BA, 1979, SURF SCI, V79, P1337
[2] Colombie N., 1969, Radiation Effects, V2, P31, DOI 10.1080/00337576908235577
[3] ION BOMBARDMENT AND IMPLANTATION
DEARNALEY, G
[J]. REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) : 405 - +
[4] ERICKSSON L, 1967, PHYS REV, V161, P219
[5] FIRSOV OB, 1959, SOV PHYS JETP-USSR, V9, P1076
[6] HIGH-CURRENT DENSITY GA+ IMPLANTATIONS INTO SI
HART, RR
ANDERSON, CL
DUNLAP, HL
SELIGER, RL
WANG, V
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 865 - 867
[7] DIRECT AND RECOIL-INDUCED ELECTRON-EMISSION FROM ION-BOMBARDED SOLIDS
HOLMEN, G
SVENSSON, B
SCHOU, J
SIGMUND, P
[J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2247 - 2254
[8] LEVISETTI R, NUCL INST METHODS
[9] Lindhard J, 1965, K DAN VIDENSK SELSK, V34
[10] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31