MICROSTRUCTURE AND MICRO-INDENTATION FRACTURE OF SIC-WHISKER-REINFORCED SI3N4 COMPOSITE STUDIED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：11

作者：

LEE, BT

HIRAGA, K

机构：

[1] Tohoku Univ, Sendai

来源：

MATERIALS TRANSACTIONS JIM | 1993年 / 34卷 / 10期

关键词：

SI3N4-SIC WHISKER COMPOSITE; HIGH-RESOLUTION ELECTRON MICROSCOPY; MICRO-INDENTATION TECHNIQUE; TOUGHENING MECHANISM;

D O I：

10.2320/matertrans1989.34.930

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructure and fracture behavior of a SiC-whisker-reinforced Si3N4 composite have been investigated by transmission (TEM) and high-resolution electron microscopy (HREM) and micro-indentation fracture (MIF) technique. SiC whiskers (SiC(w)) are homogeneously dispersed in the Si3N4 matrix. Most of the SiC(w) have a beta-type cubic structure with many twins and stacking faults. Amorphous layers of about 1 nm in thickness are observed at Si3N4 grain boundaries and Si3N4/SiC(w) interfaces. Cracks mainly propagate along the Si3N4 grain boundaries and Si3N4/SiC(w) interfaces in the indentation made at room temperature and 1200-degrees-C. Fracture toughening effects are due to multi-mechanism of crack deflection, bridging and microcracking.

引用

页码：930 / 936

页数：7

共 24 条

[1] SPHERICAL-IMPACT DAMAGE AND STRENGTH DEGRADATION IN SILICON-CARBIDE WHISKER SILICON-NITRIDE COMPOSITES [J].