X-RAY PHOTOELECTRON DIFFRACTION ON THE NICKEL DIAMOND, THE SILICON DIAMOND AND THE GOLD DIAMOND INTERFACE

X-ray photoelectron diffraction has been used to investigate the interfaces of Ni/diamond, Si/diamond and Au/diamond. These elements were evaporated in UHV on doped and undoped diamond (100) and (111) substrates at different temperatures. While Ni grows heteroepitaxially on the diamond surface no orientation was observed for Si and Au. The Si/diamond interface shows no carbide formation even when heating to 850 degrees C. However, the C is peak of the diamond substrate shifts to lower binding energy when evaporating Si. This could possibly be explained by band bending at the interface. Ni, Si and Au form islands at these low film coverages.