NEGATIVE SURFACE-ENERGY CHANGE ASSOCIATED WITH STEP FORMATION CAUSED BY MISFIT DISLOCATION NUCLEATION IN SEMICONDUCTOR HETEROSTRUCTURES

被引：13

作者：

ICHIMURA, M

NARAYAN, J

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC

[2] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1995年 / 72卷 / 02期

关键词：

D O I：

10.1080/01418619508239926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated the surface energy change due to step formation caused by misfit dislocation nucleation in thin-film semiconductor heterostructures. It is found that the surface energy change is negative for compressive misfit stress in the heteroepitaxial film, while it is positive for tensile misfit stress. This conclusion is in contrast to the classical model where the step formation energy is always positive and independent of the sign of the misfit. The calculated energy change is qualitatively explained by counting the number of dangling bonds on the surface. Using atomistic simulations, we have calculated the critical thickness of dislocation nucleation taking into account the surface energy change, and found that it varied from 4nm for Ge films on Si(001) substrates to 6nm for Si films on Ge(001) substrates having the same misfit.

引用

页码：297 / 304

页数：8

共 12 条

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