RECOMBINATION AND IONIZATION PROCESSES AT IMPURITY CENTERS IN HOT-ELECTRON SEMICONDUCTOR TRANSPORT

被引：35

作者：

REGGIANI, L

MITIN, V

机构：

[1] UNIV MODENA, CTR INTERUNIV STRUTTURA MAT, I-41100 MODENA, ITALY

[2] ACAD SCI UKSSR, INST SEMICOND, KIEV, UKRAINE, USSR

来源：

RIVISTA DEL NUOVO CIMENTO | 1989年 / 12卷 / 11期

关键词：

D O I：

10.1007/BF02740011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1 / 90

页数：90

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