MODELING OF THE SUBTHRESHOLD CHARACTERISTICS OF SOI MOSFETS WITH FLOATING BODY

被引：18

作者：

MATLOUBIAN, M ^{[1
]}

CHEN, CED ^{[1
]}

MAO, BY ^{[1
]}

SUNDARESAN, R ^{[1
]}

POLLACK, GP ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期

关键词：

D O I：

10.1109/16.57160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

n-channel SOI MOSFET’s with floating bodies show a threshold voltage shift and an improvement in subtheshold slope at high drain biases. The magnitude of this effect depends on the device parameters and the starting SOI substrate. A simple device model is presented that explains the observed characteristics to be due to MOS back-bias effects resulting from the positively charged floating body. The improvement in the subthreshold slope is the outcome of positive feedback between the body potential and the transistor channel current. © 1990 IEEE

引用

页码：1985 / 1994

页数：10

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