DEVELOPMENT OF NEW A-SI C-SI HETEROJUNCTION SOLAR-CELLS - ACJ-HIT (ARTIFICIALLY CONSTRUCTED JUNCTION-HETEROJUNCTION WITH INTRINSIC THIN-LAYER)

被引：463

作者：

TANAKA, M ^{[1
]}

TAGUCHI, M ^{[1
]}

MATSUYAMA, T ^{[1
]}

SAWADA, T ^{[1
]}

TSUDA, S ^{[1
]}

NAKANO, S ^{[1
]}

HANAFUSA, H ^{[1
]}

KUWANO, Y ^{[1
]}

机构：

[1] SANYO ELECT CO LTD,R&D HEADQUARTERS,HIRAKATA,OSAKA 573,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

SOLAR CELLS; HETEROJUNCTION; CRYSTALLINE SILICON; AMORPHOUS SILICON; PLASMA CVD;

D O I：

10.1143/JJAP.31.3518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200-degrees-C).

引用

页码：3518 / 3522

页数：5

共 7 条

[1]

MA W, 1992, 6TH P INT PVSEC NEW, P463

[2]

MATSUNAMI H, 1992, 6TH P INT PHOT SCI E, P11

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[4] REVERSE CURRENT CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON HETEROJUNCTIONS [J].

MIMURA, H ;

HATANAKA, Y .

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[5]

MORIKAWA H, 1990, INT PHOTOVOLTAIC SCI, P215

[6]

OKUDA K, 1983, JPN J APPL PHYS, V22, pL603

[7]

TSUGE S, 1990, INT PHOTOVOLTAIC SCI, P261

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