ELECTRICAL-PROPERTIES OF THE IODINE-DOPED MPC/N-SILICON HETEROJUNCTION

被引：6

作者：

PARK, C ^{[1
]}

PARK, YW ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT PHYS,SEOUL 157742,SOUTH KOREA

来源：

SYNTHETIC METALS | 1995年 / 71卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(94)03265-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage and capacitance-voltage characteristics of the iodine doped MPc on n-Si were measured. MPc was thermally evaporated on Si substrates and doped with iodine via gas phase doping. For I-V measurements, the conventional rectifying properties mere shown. Using the one sided abrupt junction model in C-V measurements, we can obtain the density of states at the heterointerface around 10(13)/cm(3).

引用

页码：2295 / 2296

页数：2