DEPENDENCE OF MOBILITY ON DX-CENTER CONFIGURATION IN GAAIAS ALLOY

被引：6

作者：

PIOTRZKOWSKI, R

KONCZEWICZ, L

LITWINSTASZEWSKA, E

ROBERT, JL

LORENZINI, P

机构：

[1] High Pressure Res. Centre, Polish Acad. of Sci., Warsaw

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1088/0268-1242/6/4/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A combined effect of illumination, pressure and temperature [1] allows us to obtain GaAlAs material with different DX-centre configurations populated at different rates. In the present paper, study of the effects of temperature on Hall effect and resistivity in Si-doped GaAlAs alloy (Al content x = 15%) has made evident that the mobility in the sample in non-equilibrium conditions is not a single-value function of free carrier concentration, and that with increasing carrier concentration the mobility can either decrease or increase, depending on the distribution of DX-centres between different configurations. The observed behaviour can be explained qualitatively within the framework of a multilevel, negative-U DX-centre model, if the effects of spatial correlations between DX- and d+ centres are taken into account.

引用

页码：250 / 253

页数：4

共 12 条

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