SATURATION EFFECTS IN THE CARRIER-INDUCED REFRACTIVE-INDEX IN A SEMICONDUCTOR GAIN MEDIUM

被引：7

作者：

CHOW, WW

DENTE, GC

DEPATIE, D

机构：

来源：

OPTICS LETTERS | 1987年 / 12卷 / 01期

关键词：

D O I：

10.1364/OL.12.000025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：25 / 27

页数：3

共 9 条

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[3]

CHOW WW, 1986, J OPT SOC AM B, V3, P833, DOI 10.1364/JOSAB.3.000833

[4] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS [J].

HENRY, CH ;

LOGAN, RA ;

BERTNESS, KA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4457-4461

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) :1078-1083

[6] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].

MANNING, J ;

OLSHANSKY, R ;

SU, CB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530

[7] ON THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA IN SEMICONDUCTOR INJECTION-LASERS [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (08) :631-633

[8] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS [J].

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[9]

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