ANALYTICAL MODEL FOR OPTICALLY GENERATED CURRENTS IN GAAS-MESFETS

被引：57

作者：

MADJAR, A ^{[1
]}

HERCZFELD, PR ^{[1
]}

PAOLELLA, A ^{[1
]}

机构：

[1] USA,LABCOM,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 08期

关键词：

D O I：

10.1109/22.149548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The MESFET as an optically sensitive microwave element on MMIC's has attracted much attention. The theoretical modelling of the device, however, needs more consideration. This paper proposes an analytical model for the illuminated MESFET, complete in that all major contributions to the optical response are considered. The dependence of the response on bias conditions, the wavelength and intensity of the optical input, and the particulars of device structure, are incorporated in the model. The importance of the internal photovoltaic effect, which has not been properly modelled previously, is emphasized. The novel theoretical model is verified by experimental results.

引用

页码：1681 / 1691

页数：11

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