EFFECT OF TRAPPING IN THIN OXIDES ON THE WRITE AND ERASE CHARACTERISTICS OF FLOATING GATE EEPROM DEVICES

被引：1

作者：

BHATTACHARYYA, A

机构：

来源：

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D O I：

10.1088/0022-3727/17/4/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：799 / 803

页数：5

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