QUANTUM TRANSPORT STUDIES OF GRAIN-BOUNDARIES IN P-HG1-XMNXTE

The authors show that charged traps at grain boundaries in p-Hg//1// minus //xMn//xTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov-de Haas effect measurements the authors demonstrate that the electron gas in the layer forms a quasi-two-dimensional system. They determine electric subband populations and effective masses and they establish parameters of the potential well at the grain boundary within a simple model.