SEMICONDUCTOR EDGES CAN BIND ELECTRONS

被引：18

作者：

EXNER, P ^{[1
]}

SEBA, P ^{[1
]}

STOVICEK, P ^{[1
]}

机构：

[1] JOINT INST NUCL RES,THEORET PHYS LAB,DUBNA 141980,USSR

来源：

PHYSICS LETTERS A | 1990年 / 150卷 / 3-4期

关键词：

D O I：

10.1016/0375-9601(90)90117-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the electron behaviour in sharply edged semiconductor narrow layers or quantum wires. If the layers are sufficiently narrow, the energy spectrum extends below the threshold energy of the first quantum conduction channel created by the transverse confinement. This leads to the existence of a (possibly measurable) edge-confined current. The critical layer width is estimated and the example of a rectangular edge is treated numerically. © 1990.

引用

页码：179 / 182

页数：4

共 13 条

[1] QUANTUM-MECHANICS OF A CONSTRAINED PARTICLE [J].