OBSERVATIONS OF SCHOTTKY AND POOLE-FRENKEL EMISSION IN LEAD PHTHALOCYANINE THIN-FILMS USING ALUMINUM INJECTING ELECTRODES

被引:18
作者
SHAFAI, TS [1 ]
GOULD, RD [1 ]
机构
[1] UNIV KEELE,DEPT PHYS,THIN FILMS LAB,KEELE ST5 5BG,STAFFS,ENGLAND
关键词
D O I
10.1080/00207219208925669
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
DC current density-voltage measurements have been performed on vacuum evaporated aluminium-lead phthalocyanine-gold sandwich structures for both electrical polarities. The electrical characteristics differed markedly depending on whether the positive hole-injecting electrode was gold (forward-bias) or aluminium (reverse-bias). An extensive study of such characteristics revealed two distinct regions in the forward-bias characteristics. In the first of these a power-law dependence of current density (J) on voltage (V) was observed with exponent n approximately 4, and this was identified with space-charge-limited conductivity (SCLC) controlled by an exponential distribution of trap levels of approximate concentration 10(25) m-3, in agreement with the authors' earlier work. In the second region a square-law dependence of J on V was observed, which was identified with SCLC controlled by traps of approximate concentration 10(26) m-3 and situated at a discrete energy level. Under reverse-bias, current density was considerably lower than for forward-bias and invariably showed a linear dependence of log J on V1/2, but with different slopes in the lower and higher voltage ranges. At lower voltages this behaviour was related to Schottky emission with barrier height phi(s) approximately 1 eV and width approximately 50nm, while at higher voltages Poole-Frenkel emission was identified. Measurements of capacitance C as a function of applied voltage gave a linear dependence of C-2 on V under reverse bias, confirming both the existence of a Shottky barrier and a barrier height of approximately 1 eV.
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页码:307 / 313
页数:7
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