DIAMOND GROWTH ON SILICON-NITRIDE BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

SALVADORI, MC ^{[1
]}

AGER, JW ^{[1
]}

BROWN, IG ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB, BERKELEY, CA 94720 USA

来源：

关键词：

D O I：

10.1016/0925-9635(92)90107-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films were grown on hot-pressed silicon nitride (HPSN) substrates by microwave plasma chemical vapor deposition. The pre-growth surface preparation was varied and its effect on diamond quality and growth rate was studied. Scratching the HPSN with diamond powder is necessary for growth of continuous and uniform films. © 1992.

引用

页码：818 / 823

页数：6

共 21 条

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[2]

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