PHOTOLUMINESCENCE IN HIGH-RESISTIVITY CDTE-IN

被引：99

作者：

BARNES, CE

ZANIO, K

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1063/1.322145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3959 / 3964

页数：6

共 34 条

[1] AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P762
[2] ANNEALING OF ELECTRON-IRRADIATED GAAS
AUKERMAN, LW
GRAFT, RD
[J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &
[3] BARNES C, TO BE PUBLISHED
[4] Barnes C. E., 1970, Radiation Effects, V2, P243, DOI 10.1080/00337576908243986
[5] CHARACTERIZATION OF TRANSPORT PROPERTIES OF HALOGEN-DOPED CDTE USED FOR GAMMA-RAY DETECTORS
BELL, RO
WALD, FV
CANALI, C
NAVA, F
OTTAVIAN.G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 331 - 341
[6] Bryant F. J., 1971, Radiation Effects, V9, P115, DOI 10.1080/00337577108242042
[7] BROAD-BAND CATHODOLUMINESCENCE OF CADMIUM TELLURIDE
BRYANT, FJ
TOTTERDELL, DH
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (01): : K75 - +
[8] SELF-COMPENSATION IN CDTE
CANALI, C
OTTAVIANI, G
BELL, RO
WALD, FV
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (10) : 1405 - 1413
[9] RELATIVE MAGNITUDE OF DIFFUSION CONSTANTS OF CADMIUM VACANCIES AND INDIUM-CADMIUM VACANCY PAIRS IN CDS AND CDTE
CHERN, SS
KROGER, FA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 215 - 222
[10] Curie D., 1967, PHYSICS CHEM 2 6 COM, P435