A PLANAR INP/INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE

被引：25

作者：

SHIRAI, T

YAMAZAKI, S

KAWATA, H

NAKAJIMA, K

KANEDA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 09期

关键词：

D O I：

10.1109/T-ED.1982.20889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1404 / 1407

页数：4

共 16 条

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[8]

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[10] INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE [J].

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