NEW CONDITIONS FOR SYNTHESIZING SOI STRUCTURES BY HIGH-DOSE OXYGEN IMPLANTATION

被引:56
作者
STOEMENOS, J [1 ]
JAUSSAUD, C [1 ]
BRUEL, M [1 ]
MARGAIL, J [1 ]
机构
[1] CEN,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1016/0022-0248(85)90020-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:546 / 550
页数:5
相关论文
共 11 条
[1]  
Burke J., 1965, KINETICS PHASE TRANS
[2]  
DUBUS M, 1985, 7TH INT C ION BEAM A
[3]  
HOLLAND OW, 1984, APPL PHYS LETT, V45, P10
[4]   SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW [J].
JASTRZEBSKI, L .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :253-270
[5]   MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].
JAUSSAUD, C ;
STOEMENOS, J ;
MARGAIL, J ;
DUPUY, M ;
BLANCHARD, B ;
BRUEL, M .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066
[6]  
MARGAIL J, UNPUB J PHYSIQUE APP
[8]   STRUCTURE OF THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI SILICON AFTER HIGH-TEMPERATURE ANNEALING [J].
PONCE, FA ;
YAMASHITA, T ;
HAHN, S .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1051-1053
[9]   DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURE [J].
STAVOLA, M ;
PATEL, JR ;
KIMERLING, LC ;
FREELAND, PE .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :73-75
[10]   DIFFUSION-LIMITED GROWTH OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON [J].
WADA, K ;
INOUE, N ;
KOHRA, K .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :749-752