SIMULATION OF THE OBLIQUE-INCIDENCE SPECULAR REFLECTIVITY OF UNIAXIAL SEMICONDUCTORS AT PLASMA RESONANCE

The effect of free carriers on the infrared normal incidence specular reflectivity of semiconductors has been generally used for an estimation of the effective mass of carriers within the scope of the Drude-Zener theory. The susceptibility effective mass can be calculated provided the concentration of carriers, the high frequency dielectric constant, and the frequency of the minimum of a normal reflectivity spectrum are known. The measurements with radiation polarized parallel to the c-axis are difficult as there are problems with the production of a reflectance face that is parallel to the c-axis (i.e., perpendicular to the easy cleavage planes). To avoid problems the use of oblique incidence specular reflectivity measurements at basal (easy cleavage) plane reflection is proposed.