THE 1.681 EV CENTER IN POLYCRYSTALLINE DIAMOND

被引：46

作者：

CLARK, CD

DICKERSON, CB

机构：

[1] J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading

来源：

SURFACE & COATINGS TECHNOLOGY | 1991年 / 47卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(91)90299-C

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The 1.681 eV centre in chemically vapour deposited diamond is associated with the presence of silicon in the film. This was confirmed by silicon ion implantation experiments on bulk diamond. Following an investigation of the 1.681 eV centre under the effects of electron irradiation and subsequent heat treatment, it is suggested that the centre is due to a substitutional silicon atom associated with a vacancy in a nearest neighbour lattice site.

引用

页码：336 / 343

页数：8

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