ELECTRICAL PROPERTIES OF SILICON WITH DIVACANCIES

被引:5
作者
KHOLODAR, GA
VINETSKII, VL
机构
[1] TG SHEVCHENKO STATE UNIV,KIEV,UKSSR
[2] ACAD SCI UKSSR,PHYS INST,KIEV,UKSSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期
关键词
D O I
10.1002/pssa.2210300104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:47 / 51
页数:5
相关论文
共 4 条
[1]  
KHOLODAR GA, 1972, P C DEFECTS SEMICOND, P278
[2]   RADIATION DEFECTS CREATED BY CO60 GAMMA-RAYS IN P- AND N-TYPE SI OF HIGH PURITY [J].
KONOZENK.ID ;
SEMENYUK, AK ;
KHIVRICH, VI .
PHYSICA STATUS SOLIDI, 1969, 35 (02) :1043-&
[3]   STATISTICS CONDUCTIVITY IN SI CONTAINING DIVACANCIES [J].
VINETSKII, VL .
PHYSICA STATUS SOLIDI, 1970, 41 (02) :K93-+
[4]  
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