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SOLUTION REGROWTH OF PLANAR INSB LASER STRUCTURES
被引:4
作者
:
MELNGAIL.I
论文数:
0
引用数:
0
h-index:
0
MELNGAIL.I
CALAWA, AR
论文数:
0
引用数:
0
h-index:
0
CALAWA, AR
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1966年
/ 113卷
/ 01期
关键词
:
D O I
:
10.1149/1.2423864
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:58 / &
相关论文
共 5 条
[1]
THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS
EDMOND, JT
论文数:
0
引用数:
0
h-index:
0
EDMOND, JT
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON,
1959,
73
(472):
: 622
-
627
[2]
SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
: 385
-
388
[3]
LONGITUDINAL INJECTION-PLASMA LASER OF INSB (10 DEGREES K - O-21KG LONGITUDINAL TO CURRENT - E)
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(03)
: 59
-
+
[4]
NELSON H, 1963, RCA REV, V24, P603
[5]
DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(04)
: 559
-
563
←
1
→
共 5 条
[1]
THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS
EDMOND, JT
论文数:
0
引用数:
0
h-index:
0
EDMOND, JT
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON,
1959,
73
(472):
: 622
-
627
[2]
SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
: 385
-
388
[3]
LONGITUDINAL INJECTION-PLASMA LASER OF INSB (10 DEGREES K - O-21KG LONGITUDINAL TO CURRENT - E)
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(03)
: 59
-
+
[4]
NELSON H, 1963, RCA REV, V24, P603
[5]
DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(04)
: 559
-
563
←
1
→