HIGH-FREQUENCY PROPERTIES AND CONDUCTANCE OF GAAS/ALGAAS MICROSTRUCTURES

被引：12

作者：

BYKOV, AA

GUSEV, GM

KVON, ZD

KATKOV, AV

PLYUCHIN, VB

机构：

[1] Siberian Branch, Institute of Semiconductor Physics, Academy of Sciences, Novosibirsk

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期

关键词：

D O I：

10.1016/0749-6036(91)90327-N

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Fluctuations of the conductance, microwave photoconductance and photovoltage in mesoscopic GaAs AlGaAs heterostructures are studied. It is observed that their behaviour in a strong magnetic field (ωcτ ≫ 1) is quite different for quasi two-dimensional and quasi one-dimensional devices. © 1991.

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页码：287 / 289

页数：3

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