EXCIMER-LASER-INDUCED CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON

被引：35

作者：

WINER, K ^{[1
]}

ANDERSON, GB ^{[1
]}

READY, SE ^{[1
]}

BACHRACH, RZ ^{[1
]}

JOHNSON, RI ^{[1
]}

PONCE, FA ^{[1
]}

BOYCE, JB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

引用

页码：2222 / 2224

页数：3

共 11 条

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