EFFICIENCY AND STABILITY ENHANCEMENT OF N-SI PHOTOELECTRODES IN AQUEOUS-SOLUTION

被引：37

作者：

LEVYCLEMENT, C

LAGOUBI, A

NEUMANNSPALLART, M

RODOT, M

TENNE, R

机构：

[1] Laboratoire de Physique des Solides, CNRS, F-92195 Meudon Cedex

[2] Materials Research Department, The Weizmann Institute of Science

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 12期

关键词：

D O I：

10.1149/1.2085511

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel approach is reported for minimizing light conversion efficiency losses on n-type silicon due to surface recombination and reflection of the incident light, using photoelectrochemical etching. Efficiency and stability of aqueous (concentrated HI) photoelectrochemical cells can be improved by this process.

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收藏

页码：L69 / L71

页数：3

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