EFFICIENCY AND STABILITY ENHANCEMENT OF N-SI PHOTOELECTRODES IN AQUEOUS-SOLUTION

被引：37

作者：

LEVYCLEMENT, C

LAGOUBI, A

NEUMANNSPALLART, M

RODOT, M

TENNE, R

机构：

[1] Laboratoire de Physique des Solides, CNRS, F-92195 Meudon Cedex

[2] Materials Research Department, The Weizmann Institute of Science

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 12期

关键词：

D O I：

10.1149/1.2085511

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel approach is reported for minimizing light conversion efficiency losses on n-type silicon due to surface recombination and reflection of the incident light, using photoelectrochemical etching. Efficiency and stability of aqueous (concentrated HI) photoelectrochemical cells can be improved by this process.

引用

页码：L69 / L71

页数：3