MICROWAVE NEGATIVE CONDUCTANCE OF BULK GAAS

被引：11

作者：

HAKKI, BW

BECCONE, JP

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 06期

关键词：

D O I：

10.1109/PROC.1966.4932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：916 / +

页数：1

共 7 条

[1] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

[2] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

[3] MICROWAVE PHENOMENA IN BULK GAAS [J].

HAKKI, BW ;

KNIGHT, S .

[4]

HAKKI BW, TO BE PUBLISHED

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[6] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

THIM, HW ;

BARBER, MR ;

HAKKI, BW ;

KNIGHT, S ;

UENOHARA, M .