2-PHOTON SPECTROSCOPY OF GAAS

被引：11

作者：

SEILER, DG ^{[1
]}

LITTLER, CL ^{[1
]}

HEIMAN, D ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2191 / 2195

页数：5

共 54 条

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[7]

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[9] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

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[10] 2-PHOTON ABSORPTION OF NEODYMIUM LASER-RADIATION IN GALLIUM-ARSENIDE [J].

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