PRESSURE-INDUCED CHANGES IN THE EFFECTIVE MASS OF ELECTRONS IN GAAS, INP AND (GAIN)(ASP)/INP

被引：9

作者：

ADAMS, AR ^{[1
]}

SHANTHARAMA, LG ^{[1
]}

NICHOLAS, RJ ^{[1
]}

SARKAR, CK ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PV,ENGLAND

来源：

PHYSICA B & C | 1986年 / 139卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(86)90607-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：401 / 403

页数：3

共 7 条

[1]

AHMAD CN, 1981, HIGH PRESSURE RES IN, V2, P489

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[3] K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].

HERMANN, C ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1977, 15 (02) :823-833

[4]

Pearsall T. P., 1982, GaInAsP alloy semiconductors, P295

[5] THE K.P INTERACTION IN INP AND GAAS FROM THE BAND-GAP DEPENDENCE OF THE EFFECTIVE MASS [J].

SHANTHARAMA, LG ;

ADAMS, AR ;

AHMAD, CN ;

NICHOLAS, RJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (25) :4429-4442

[6] THE INFLUENCE OF ALLOY DISORDER ON THE K.P INTERACTION IN (GAIN) (ASP)/INP [J].

SHANTHARAMA, LG ;

NICHOLAS, RJ ;

ADAMS, AR ;

SARKAR, CK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :L443-L448

[7] MAGNETOPHONON EFFECT IN 3-V SEMICONDUCTING COMPOUNDS [J].

STRADLIN.RA ;

WOOD, RA .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (06) :1711-+

← 1 →