PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE

被引:135
作者
KONSTANTINOV, AO [1 ]
HENRY, A [1 ]
HARRIS, CI [1 ]
JANZEN, E [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
关键词
D O I
10.1063/1.113182
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface.© 1995 American Institute of Physics.
引用
收藏
页码:2250 / 2252
页数:3
相关论文
共 15 条
  • [1] PROPERTIES OF SILICON-ELECTROLYTE JUNCTIONS AND THEIR APPLICATION TO SILICON CHARACTERIZATION
    FOLL, H
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01): : 8 - 19
  • [2] SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC
    IKEDA, M
    MATSUNAMI, H
    TANAKA, T
    [J]. PHYSICAL REVIEW B, 1980, 22 (06): : 2842 - 2854
  • [3] IVANOV PA, 1993, SEMICONDUCTORS+, V28, P688
  • [4] ELECTRICAL-PROPERTIES AND FORMATION MECHANISM OF POROUS SILICON-CARBIDE
    KONSTANTINOV, AO
    HARRIS, CI
    JANZEN, E
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (21) : 2699 - 2701
  • [5] MAKAROV VV, 1972, SOV PHYS-SOLID STATE, V13, P1774
  • [6] BLUE-GREEN LUMINESCENCE FROM POROUS SILICON-CARBIDE
    MATSUMOTO, T
    TAKAHASHI, J
    TAMAKI, T
    FUTAGI, T
    MIMURA, H
    KANEMITSU, Y
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 226 - 228
  • [7] OUISSE T, 1993, I PHYS C SER, V137, P683
  • [8] PATRICK L, 1969, MATER RES B S, V4, P129
  • [9] PATRICK L, 1972, PHYS REV B, V5, P1253
  • [10] DIRECT OBSERVATION OF POROUS SIC FORMED BY ANODIZATION IN HF
    SHOR, JS
    GRIMBERG, I
    WEISS, BZ
    KURTZ, AD
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2836 - 2838