ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON

被引:28
作者
JACKSON, WB
STREET, RA
THOMPSON, MJ
机构
关键词
D O I
10.1016/0038-1098(83)91063-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:435 / 438
页数:4
相关论文
共 18 条
[1]   THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
AST, DG ;
BRODSKY, MH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285
[2]   PHOTOCONDUCTIVITY AND TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].
CRANDALL, RS .
SOLAR CELLS, 1980, 2 (03) :319-330
[3]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[4]   EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J].
GOODMAN, NB .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04) :407-434
[5]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[6]   OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
BIEGELSEN, DK ;
NEMANICH, RJ ;
KNIGHTS, JC .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :105-107
[7]  
JACKSON WB, 1982, 16TH P INT C PHYS SE
[8]  
KAGAWA T, 1982, PHYS REV B, V26, P474
[9]   PHOTOGENERATION, OPTICAL-ABSORPTION AND TRANSPORT IN HYDROGENATED SPUTTERED AMORPHOUS-SILICON [J].
MOUSTAKAS, TD .
SOLID STATE COMMUNICATIONS, 1980, 35 (10) :745-751
[10]   THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
ORENSTEIN, J ;
KASTNER, MA .
SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89