EMPIRICAL POTENTIAL-BASED SI-GE INTERATOMIC POTENTIAL AND ITS APPLICATION TO SUPERLATTICE STABILITY

被引：59

作者：

ITO, T

KHOR, KE

DASSARMA, S

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.9715

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9715 / 9722

页数：8

共 40 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].

BEAN, JC .

SCIENCE, 1985, 230 (4722) :127-131

[3] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].

BISWAS, R ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004

[4] GENERATION OF AMORPHOUS-SILICON STRUCTURES WITH USE OF MOLECULAR-DYNAMICS SIMULATIONS [J].

BISWAS, R ;

GREST, GS ;

SOUKOULIS, CM .

PHYSICAL REVIEW B, 1987, 36 (14) :7437-7441

[5] EXCESS ELASTIC ENERGY AND THE INSTABILITY OF (GAAS)1(INAS)1(001), GA3INAS4, GAIN3AS4 AND GA1-XINXAS ALLOYS [J].

BOGUSLAWSKI, P ;

BALDERESCHI, A .

SOLID STATE COMMUNICATIONS, 1988, 66 (06) :679-682

[6] SURFACE AND THERMODYNAMIC INTERATOMIC FORCE-FIELDS FOR SILICON CLUSTERS AND BULK PHASES [J].

CHELIKOWSKY, JR ;

PHILLIPS, JC ;

KAMAL, M ;

STRAUSS, M .

PHYSICAL REVIEW LETTERS, 1989, 62 (03) :292-295

[7] STRAINED SI/GE SUPERLATTICES - STRUCTURAL STABILITY, GROWTH, AND ELECTRONIC-PROPERTIES [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW B, 1988, 38 (03) :1835-1848

[8] LATTICE-DYNAMICS OF SILICON WITH EMPIRICAL MANY-BODY POTENTIALS [J].

COWLEY, ER .

PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2379-2381

[9] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&

[10] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION [J].

DODSON, BW .

PHYSICAL REVIEW B, 1987, 36 (02) :1068-1074

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