CHANNELING STUDIES IN GRAPHITE

被引：19

作者：

ELMAN, BS

BRAUNSTEIN, G

DRESSELHAUS, MS

DRESSELHAUS, G

VENKATESAN, T

WILKENS, B

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.334210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2114 / 2119

页数：6

共 22 条

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[3] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[4] Chu W. K., 1978, Backscattering Spectrometry, P225
[5] Chu W. K., 1978, Backscattering Spectrometry, DOI DOI 10.1016/B978-0-12-173850-1.50008-9
[6] OBSERVATION OF TWO-DIMENSIONAL ORDERING IN ION-DAMAGED GRAPHITE DURING POST-IMPLANTATION ANNEALING
ELMAN, BS
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DRESSELHAUS, MS
DRESSELHAUS, G
VENKATENSAN, T
GIBSON, JM
[J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4703 - 4708
[7] FELDMAN LC, 1982, MATERIALS ANAL ION C
[8] CHANNELING OF PROTONS IN THIN BATIO3 CRYSTALS AT TEMPERATURES ABOVE AND BELOW FERROELECTRIC CURIE-POINT
GEMMELL, DS
MIKKELSON, RC
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (05): : 1613 - +
[9] CHANNELING AND RELATED EFFECTS IN MOTION OF CHARGED-PARTICLES THROUGH CRYSTALS
GEMMELL, DS
[J]. REVIEWS OF MODERN PHYSICS, 1974, 46 (01) : 129 - 227
[10] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON
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