FOCUSED-ION BEAM MODIFICATION OF WAVE-GUIDE PHOTONIC DEVICES

被引：6

作者：

PATTERSON, BD

MUSIL, C

SIEGWART, H

VONLANTHEN, A

机构：

[1] CH-8048 Zurich

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00122-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Localised depressions and 50-line grating structures have been milled into the active optical waveguides of GaInAsP/InP superluminescent diodes using a 30 keV focused Ga+ beam. These features produce distinct modifications in the optical output spectra of the devices.

引用

页码：347 / 350

页数：4

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