COMPENSATION MECHANISM IN SEMI-INSULATING GAAS - THE ROLE OF INTRINSIC ACCEPTOR DEFECTS

被引：26

作者：

VONBARDELEBEN, HJ ^{[1
]}

BOURGOIN, JC ^{[1
]}

STIEVENARD, D ^{[1
]}

机构：

[1] INST SUPER ELECTR NORD,DEPT PHYS SOLIDES,F-59046 LILLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 27 条

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[3]

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[9] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].

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[10] COMPENSATION IN GAAS CRYSTALS DUE TO ANTI-STRUCTURE DISORDER [J].

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