TIME-RESOLVED SPECTROSCOPY OF ZN-DOPED AND CD-DOPED GAN

[1] RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 809 - +

[2] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3

[3] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[4] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[5] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[6] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[7] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3797 - &

[8] LUMINESCENCE OF BE-DOPED AND MG-DOPED GAN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4234 - 4235

[9] EFFECT OF GROWTH PARAMETERS ON PROPERTIES OF GAN-ZN EPILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 136 - 143

[10] KHAN M, 1986, SOLID STATE COMMUN, V57, P640

[1] RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 809 - +

[2] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3

[3] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[4] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[5] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[6] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[7] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3797 - &

[8] LUMINESCENCE OF BE-DOPED AND MG-DOPED GAN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4234 - 4235

[9] EFFECT OF GROWTH PARAMETERS ON PROPERTIES OF GAN-ZN EPILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 136 - 143

[10] KHAN M, 1986, SOLID STATE COMMUN, V57, P640