ELECTRON-MICROSCOPY STUDY OF FERROELASTIC AND FERROELECTRIC DOMAIN-WALL MOTIONS INDUCED BY THE IN-SITU APPLICATION OF AN ELECTRIC-FIELD IN BATIO3

被引：37

作者：

SNOECK, E ^{[1
]}

NORMAND, L ^{[1
]}

THOREL, A ^{[1
]}

ROUCAU, C ^{[1
]}

机构：

[1] CEMES,CNRS,LOE,F-31055 TOULOUSE,FRANCE

来源：

PHASE TRANSITIONS | 1994年 / 46卷 / 02期

关键词：

FERROELECTRICITY; FERROELASTICITY; TRANSMISSION ELECTRON MICROSCOPY; DOMAIN SWITCHES; MEMORY EFFECT;

D O I：

10.1080/01411599408200317

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have built a new TEM heating stage permitting the in situ application of an electric field on sample surfaces and have performed experiments on ferroelectric domain switching in BaTiO3. The domain growth induced by the electric field first occurs by domain tip motion and then by the lateral shift of walls. A memory effect due to the localization of defects along the domain boundaries has been observed.

引用

页码：77 / 88

页数：12

共 14 条

[1] POSSIBLE SPECIES OF FERROMAGNETIC, FERROELECTRIC, AND FERROELASTIC CRYSTALS [J].