MOLECULAR-BEAM EPITAXIAL-GROWTH, CHARACTERIZATION AND PERFORMANCE OF HIGH-DETECTIVITY GAINASSB/GASB PIN DETECTORS OPERATING AT 2.0 TO 2.6 MU-M

被引：18

作者：

LI, AZ

ZHONG, JQ

ZHENG, YL

WANG, JX

RU, GP

BI, WG

QI, M

机构：

[1] National Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80163-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy has been employed to grow GaxIn1-xAs1-ySby PIN detectors operating at 2.0 to 2.6 mu m on (100)-oriented GaSb substrates. The epitaxial layers were characterized by X-ray double-crystal diffraction, Fourier transform infrared spectroscopy, electron microprobe analysis, and Hall effect measurements. The background hole concentration and mobility at room temperature are (4-5) x 10(16) cm(-3), 254 cm(2)/V . s and 9 x 10(15) cm(-3), 970 cm(2)/V . s for GaInAsSb and GaSb, respectively. For a PIN mesa front-illuminated photodetector, a maximum external quantum efficiency of 65% without anti-reflection coating and a peak detectivity D-lambda* at 2.5 mu m of 3.0 x 10(9) cm Hz(1/2)/W with a cut-off wavelength of 2.6 mu m at room temperature have been achieved.

引用

页码：1375 / 1378

页数：4

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