THE GROWTH AND PHYSICS OF ULTRA-HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS ON (311)A GAAS SURFACE

被引：10

作者：

HENINI, M ^{[1
]}

RODGERS, PJ ^{[1
]}

CRUMP, PA ^{[1
]}

GALLAGHER, BL ^{[1
]}

HILL, G ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00788-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the molecular beam epitaxy growth of modulation-doped GaAs-(Ga,Al)As heterostructures on the (311)A GaAs surface using silicon as the acceptor. Two-dimensional hole gases (2DHGs) with low-temperature hole mobility exceeding 1.2 x 10(6) cm(2) V-1 s(-1) with carrier concentrations as low as 0.8 x 10(11) cm(-2) have been obtained. This hole mobility is the highest ever observed at such low densities by any growth technique. We also report the first observation of persistent photoconductivity in a 2DHG. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above similar to 4 K and interface scattering at lower temperatures.

引用

页码：451 / 454

页数：4