MECHANISM OF CHARGE TRANSPORT AND LIGHT EMISSION IN ZNSEXTE1-X P-N JUNCTIONS

被引：30

作者：

AVEN, M

GARWACKI, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 05期

关键词：

D O I：

10.1063/1.1709875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2302 / &

相关论文

共 31 条

[1] EFFICIENT VISIBLE INJECTION ELECTROLUMINESCENCE FROM P-N JUNCTIONS IN ZNSEXTE1-X1 (SINGLE CRYSTALS QUANTUM EFFICIENCY 18PERCENT AT 70DEGREESK E)
AVEN, M
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 146 - &
[2] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE
AVEN, M
SEGALL, B
[J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +
[3] SYNTHESIS + TRANSPORT PROPERTIES OF ZNSE-ZNTE MIXED CRYSTALS IN N- + P-TYPE FORM ( CARRIER CONCENTRATION + MOBILITY AS FUNCTION OF TEMPERATURE MINIMUM RESISTANCE - 1OMEGA-CM E )
AVEN, M
GARWACKI, W
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (08) : 160 - &
[4] AVEN M, 1966, B AM PHYS SOC, V11, P178
[5] Bube R.H, 1960, PHOTOCONDUCTIVITY PR, P68
[6] CROSS-SECTION RATIOS OF SENSITIZING CENTERS IN PHOTOCONDUCTORS
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1707 - &
[7] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P229
[8] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P171
[9] EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E)
CROWDER, BL
MOREHEAD, FF
WAGNER, PR
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 148 - &
[10] CROWDER BL, 1966, JUN SOL DEV RES C

← 1 2 3 4 →