PLASMA EXPANSION AND BAND-GAP RENORMALIZATION IN CDTE AND GAP

被引：16

作者：

SCHWEIZER, H

ZIELINSKI, E

机构：

[1] Univ Stuttgart, Physikalisches Inst,, Stuttgart, West Ger, Univ Stuttgart, Physikalisches Inst, Stuttgart, West Ger

来源：

JOURNAL OF LUMINESCENCE | 1985年 / 30卷 / 1-4期

关键词：

SEMICONDUCTING CADMIUM COMPOUNDS - SEMICONDUCTING GALLIUM COMPOUNDS - SEMICONDUCTOR DEVICES;

D O I：

10.1016/0022-2313(85)90041-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Detailed experimental and theoretical investigations, based on direct excite and probe experiments and on line-shape analysis, on the influence of many-body interaction, polar interaction, and transport effects on the energetic position and shape of the electron-hole plasma (EHP) emission are reported. The comparison of optical EHP properties in an indirect (GaP) and a direct (CdTe) semiconductor of similar polarity offers the possibility of a separation of drift effects and polar effects with respect to band-gap renormalization. Direct evidence of a fast plasma drift in CdTe is obtained by thickness sensitive optical excite and probe experiments.

引用

页码：37 / 49

页数：13

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