A MODEL OF THERMAL TRANSFER IN CZOCHRALSKI SILICON MOLTEN

被引:5
作者
YAMASHITA, K [1 ]
KITAGAWA, K [1 ]
AOKI, T [1 ]
KAJITA, E [1 ]
FUJINO, N [1 ]
SHIRAIWA, T [1 ]
机构
[1] OSAKA TITANIUM CO LTD,OSAKA 660,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12A期
关键词
CZ SILICON; THERMAL TRANSFER MODEL; LOCAL DYNAMIC MOTION; TURBULENT; TEMPERATURE FLUCTUATION;
D O I
10.1143/JJAP.30.3465
中图分类号
O59 [应用物理学];
学科分类号
摘要
Simultaneous multipoint measurement has been performed to determine the temperature of silicon molten of a Czochralski (CZ) system during the growth of a monocrystalline ingot. A high magnitude of temperature fluctuation was found to be totally random without correlation among temperatures of various points in the molten, a phenomenon which could not be explained by models based on a lamina flow. The magnitude of the fluctuation, however, was observed to be related with effective thermal transfer of the molten. A model which took account of thermal transfer induced by local dynamical random motion, a kind of turbulence, of the molten was proposed. The time-averaged temperature distribution taken from the solution of a static diffusion equation with the effective thermal diffusivity agreed very well with the experimental results.
引用
收藏
页码:3465 / 3470
页数:6
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