GAS SENSOR BASED ON A TRANSISTOR STRUCTURE

[1] PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1091 - 1099

[2] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57

[3] LARGE-SIGNAL TRANSIENT RESPONSE OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1773 - 1784

[4] TRANSITION METAL-GATE MOS GASEOUS DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 123 - 129

[5] RZHANOV AV, 1971, ELECTRON PROCESSES S, P91

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[7] SPIRIDONOV NS, 1975, BASIS TRANSISTORS TH, P256

[8] STENBERG M, 1984, SENSOR ACTUATOR, V4, P273

[9] VOLKENSTEIN FF, 1973, PHYSICAL CHEM SEMICO, P64

[1] PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1091 - 1099

[2] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57

[3] LARGE-SIGNAL TRANSIENT RESPONSE OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1773 - 1784

[4] TRANSITION METAL-GATE MOS GASEOUS DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 123 - 129

[5] RZHANOV AV, 1971, ELECTRON PROCESSES S, P91

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[7] SPIRIDONOV NS, 1975, BASIS TRANSISTORS TH, P256

[8] STENBERG M, 1984, SENSOR ACTUATOR, V4, P273

[9] VOLKENSTEIN FF, 1973, PHYSICAL CHEM SEMICO, P64