ALL-SILICON AVALANCHE PHOTODIODE SENSITIVE AT 1.3-MU-M WITH PICOSECOND TIME RESOLUTION

被引：17

作者：

GHIONI, M

LACAITA, A

RIPAMONTI, G

COVA, S

机构：

[1] POLITECN MILAN,CNR,CEQSE,I-20133 MILAN,ITALY

[2] POLITECN MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 12期

关键词：

D O I：

10.1109/3.166458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first experimental demonstration that an all-silicon photodiode can be used to measure the pulse shape of laser diodes emitting at 1.3 mum. In order to allow the light absorption at these wavelengths, we exploit the band-gap narrowing phenomenon in heavily doped silicon. The device operates as a single photon detector in a time-correlated photon counting setup. The quantum efficiency of the detector, though only 10(-7), together with the very low noise (almost-equal-to 100 dark pulses per second) enable easy measurements on standard diode lasers. The use of standard silicon processing and the room-temperature operation are definite advantages of the device.

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页码：2678 / 2681

页数：4

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