OBSERVATION OF A LONG-LIFE PHOTOELECTROCHEMICAL CONVERSION WITH N-TYPE POROUS-SI PHOTOELECTRODES

被引：7

作者：

KOSHIDA, N

KIUCHI, Y

机构：

[1] Tokyo Univ of Agriculture &, Technology, Dep of Electronic, Engineering, Koganei, Jpn, Tokyo Univ of Agriculture & Technology, Dep of Electronic Engineering, Koganei, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 03期

关键词：

ELECTRODES; ELECTROCHEMICAL - Silicon - SEMICONDUCTING SILICON;

D O I：

10.1143/JJAP.24.L166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Application of an n-type porous-Si layer (PSL) as a working electrode of a photoelectrochemical cell was investigated. The introduction of the porous structure produced a drastic improvement in the life of n-Si under photoanodic operation. A linear relationship between the total output charge and the PSL thickness was found. At a PSL thickness of 20 mu m, the photoanode remained alive until several C/cm**2 charges were passed; this was three orders of magnitude more than was obtained from naked n-Si photoanodes. The H//2 evolution rate from Pt counterelectrode was then about 100 mu mol/10 h. The prolonged operation is closely related to an enhanced active area.

引用

页码：L166 / L168

页数：3

共 16 条

[1] CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J].

BOLTS, JM ;

BOCARSLY, AB ;

PALAZZOTTO, MC ;

WALTON, EG ;

LEWIS, NS ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (06) :1378-1385

[2] ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].

FUJISHIMA, A ;

HONDA, K .

NATURE, 1972, 238 (5358) :37-+

[3] ON ROLE OF ELECTRONS AND HOLES IN SURFACE REACTIONS ON SEMICONDUCTORS [J].

GERISCHER, H .

SURFACE SCIENCE, 1969, 13 (01) :265-+

[4] BP-STABILIZED NORMAL-SI AND NORMAL-GAAS PHOTO-ANODES [J].

GINLEY, DS ;

BAUGHMAN, RJ ;

BUTLER, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) :1999-2002

[5] HYDROGEN-EVOLVING SOLAR-CELLS [J].

HELLER, A .

SCIENCE, 1984, 223 (4641) :1141-1148

[6] SEMICONDUCTOR ELECTRODES .11. BEHAVIOR OF N-TYPE AND P-TYPE SINGLE-CRYSTAL SEMICONDUCTORS COVERED WITH THIN NORMAL-TIO2 FILMS [J].

KOHL, PA ;

FRANK, SN ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :225-229

[7] METAL FILMED SEMICONDUCTOR PHOTOELECTROCHEMICAL CELLS [J].

MENEZES, S ;

HELLER, A ;

MILLER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1268-1273

[8] IRON-OXIDE COATED N-SI AS A HETEROSTRUCTURE PHOTOANODE FOR THE PHOTOELECTROLYSIS OF WATER [J].

MORISAKI, H ;

ONO, H ;

DOHKOSHI, H ;

YAZAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L148-L150

[9] PHOTO-ELECTROCHEMICAL BEHAVIORS OF SEMICONDUCTOR ELECTRODES COATED WITH THIN METAL-FILMS [J].

NAKATO, Y ;

OHNISHI, T ;

TSUBOMURA, H .

CHEMISTRY LETTERS, 1975, (08) :883-886

[10] ENHANCED STABILITY OF PHOTO-ELECTRODES WITH ELECTROGENERATED POLYANILINE FILMS [J].

NOUFI, R ;

NOZIK, AJ ;

WHITE, J ;

WARREN, LF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2261-2265

← 1 2 →