STUDIES ON THE LATTICE POSITION OF BORON IN SILICON

被引：28

作者：

FINK, D

BIERSACK, JP

CARSTANJEN, HD

JAHNEL, F

MULLER, K

RYSSEL, H

OSEI, A

机构：

[1] UNIV STUTTGART,D-7000 STUTTGART 80,FED REP GER

[2] TECH UNIV MUNICH,INST RADIOCHEM,D-8046 GARCHING,FED REP GER

[3] IFT,D-8000 MUNCHEN 60,FED REP GER

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 77卷 / 1-2期

关键词：

D O I：

10.1080/00337578308224719

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：11 / 33

页数：23

共 35 条

[1] PRECIPITATION OF BORON ATOMS IMPLANTED IN SILICON AS DETECTED BY CHANNELING ANALYSIS [J].

AKASAKA, Y ;

HORIE, K .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3372-3374

[2]

AKASAKA Y, 1973, ION IMPLANTATION SEM, P147

[3]

AKASAKA Y, 1972, REPORTS PROGR CHANNE, P73

[4]

Andersen J.U., 1972, RADIAT EFF, V12, P219

[5]

APPLETON BR, 1981, 5TH INT C ION BEAM A

[6]

APPLETON BR, 1977, ION BEAM HDB MATERIA, P76

[7] USE OF NEUTRON-INDUCED REACTIONS FOR LIGHT-ELEMENT PROFILING AND LATTICE LOCALIZATION [J].

BIERSACK, JP ;

FINK, D ;

HENKELMANN, R ;

MULLER, K .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :93-97

[8] AN INSTRUMENT FOR LATTICE LOCATION STUDIES OF LIGHT IMPURITY ATOMS BY MEANS OF (N,ALPHA)-REACTIONS [J].

BIERSACK, JP ;

FINK, D ;

LAUCH, J ;

HENKELMANN, R ;

MULLER, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 188 (02) :411-419

[9]

Biersack JP, 1975, ION IMPLANTATION SEM, P211

[10]

CAIRNS JA, 1971, 2ND P INT C ION IMPL

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