ADHERENT CARBON-FILM DEPOSITION BY CATHODIC ARC WITH IMPLANTATION

A method of improving the adhesion of carbon thin films deposited using a cathodic vacuum arc by the use of implantation at energies up to 20 keV is described. A detailed analysis of carbon films deposited onto silicon in this way is carried out using complementary techniques of transmission electron microscopy and x-ray photoelectron spectroscopy (XPS) is presented. This analysis shows that an amorphous mixing layer consisting of carbon and silicon is formed between the grown pure carbon film and the crystalline silicon substrate. In the mixing layer, it is shown that some chemical bonding occurs between carbon and silicon. Damage to the underlying crystalline silicon substrate is observed and believed to be caused by interstitial implanted carbon atoms which XPS shows are not bonded to the silicon. The effectiveness of this technique is confirmed by scratch testing and by analysis with scanning electron microscopy which shows failure of the silicon substrate occurs before delamination of the carbon film. © 1995, American Vacuum Society. All rights reserved.