ICE DEPOSITION AND EPITAXIAL-GROWTH OF GAAS THIN-FILMS

被引：8

作者：

SHINOHARA, M ^{[1
]}

OHTANI, F ^{[1
]}

ISHIYAMA, O ^{[1
]}

ASARI, M ^{[1
]}

SARAIE, J ^{[1
]}

机构：

[1] KYOTO INST TECHNOL,FAC ENGN & DESIGN,DEPT ELECTR & INFORMAT SCI,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)00640-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The hetero- and homoepitaxial deposition of GaAs films by the ionized cluster beam technique in connection with subsequent neutral beam deposition forming a double layer structure have been studied. It is found that ICE-deposited films have superior quality in comparison with conventional ion beam deposited films and comparable quality like MBE or MOCVD-deposited films. By the fabrication of device structures, it has been proved that the start of film growth from an interface formed by an ICE-deposited As layer is advantageous. Additionally, surface cleaning by low-energy ionized cluster beams has been studied. For the first time, defect-free surface cleaning by low-energy cluster ion beams has been realized.

引用

页码：576 / 579

页数：4

共 7 条

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